Publications

Cover Gallery

Journal Articles (*Corresponding authors, †Co-first authors)

56. Photo-assisted ferroelectric domain control for α-In2Se3 artificial synapses inspired by spontaneous internal electric fields, S. -J. Kang†, W. Jung†, O. H. Gwon†, H. S. Kim, H. R. Byun, J. Y. Kim, S. G. Jang, B. Shin, O. Kwon, B. Cho, K. Yim*, and Y. -J. Yu*, Small Vol. 20, Issue 22, pp 2307346 (2024). [Selected as Cover]

55. Resistive random access memory based on graphene oxide with UV-O3 treatment, B. Shin†, J. Y. Kim†, O. H. Gwon, S.-J. Kang, H. R. Byun, S. G. Jang, Y.-J. Yu*, Journal of the Korean Physical Society Vol. 83, pp 38-42 (2023).

54. Enhanced Resistive Switching of Silver Copper Iodide Thin Films Prepared by Interfacial Phase Formation, J.-H. Cha*, J. Y. Kim, Y.-J. Yu, D.-Y. Jung*, Applied Surface Science Vol. 637, Issue 15, pp 157785 (2023)

53. Hot Electron Dynamics in MoS2/Pt Van Der Waals Electrode Interface for Self-Powered Hot Electron Photodetection

C. Hong, S. G. Jang, Y. -J. Yu, J. -H. Kim*, Advanced Materials Interfaces Vol. 10, Issue 13, pp 2300140 (2023)

52. Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor

H. K. Choi†, J. Park†, O. H. Gwon†, J. Y. Kim, S.-J. Kang, H. R. Byun, B. K. Shin, S. G. Jang, H. S. Kim* and Y. -J. Yu*,

ACS Applied Materials & Interfaces Vol. 14, Issue 20, pp 23617-23623 (2022)

51. Plasmonic Pt nanoparticles triggered efficient charge separation in TiO2/GaN NRs hybrid heterojunction for the high performance self-powered UV photodetectors, K. S. Pasupuleti, S. S. Chougule, N. Jung, Y. -J. Yu, J. -E. Oh, M. -D. Kim *,

Applied Surface Science Vol. 594, Issue 30, pp 153474 (2022).

50. Systematic design and demonstration of multi-bit generation in layered materials heterostructures floating-gate memory

O. H. Gwon†, J. Y. Kim†, H. S. Kim†, S. -J. Kang, H. R. Byun, M. Park, D. S. Lee, Y. Kim, S. Ahn, J. Kim, S. -J. Cho and

Y. -J. Yu*, Advanced Functional Materials Vol. 31, Issue 43, pp 2105472 (2021). [Selected as Cover]

49. Current Tunneling Characterization of Oxidized Black Phosphorus by Graphite Thin Film Electrodes

J. Y. Kim, O. H. Gwon, S. -J. Kang, H. R. Byun and Y. -J. Yu*, Applied Science and Convergence Technology Vol. 30,No. 3, pp 78-80 (2021).

48. Position dependent resistance and doping condition on a graphene flake

O. H. Gwon, J. Y. Kim, S.-J. Kang and Y. -J. Yu*, Applied Science and Convergence Technology Vol. 29,No. 6, pp 180-182 (2020).

47. Direct Diagnosis of the Position of Electric Failure on a Graphene Nanoribbon by using Scanning Thermal Microscopy

Y.-J. Yu*, Journal of the Korean Physical Society Vol. 76, No. 8, pp 727-730 (2020).

46. Direct Mapping Gate Response of Multilayer WSe2/MoS2 Heterostructure with Locally Different Degrees of Charge Depletion, J. Park, D. Jeon, Y. Kang, Y. -J. Yu, and T. Kim*, Journal of Physical Chemistry Letters Vol. 10, Issue. 14, pp 4010-4016 (2019). [Selected as Cover]

45. Charge Carrier Density Tuning of Graphene by Water Gating

Y. -J. Yu*, Applied Science and Convergence Technology Vol. 28,No. 6, pp 226-228 (2019).

44. Surface and Electrical Characterization of Electrochemically Oxidized Graphene

Y. -J. Yu*, Applied Science and Convergence Technology Vol. 28,No. 3, pp 51-54 (2019).

43. Gate-tuned conductance of graphene-ribbon junctions with nanoscale width variations

Y.-J. Yu*†, J.-H. Choe†, J. Y. Kim, O. H. Gwon, H. K. Choi, J. S. Choi, J. H. Kim, J.-S. Kim, J. T. Kim, J.-H. Shin and Y. K. Choi, Nanoscale Vol. 11, Issue 11, pp 4735-4742 (2019)

42. Electrochemical Doping of Graphene with H2SO4 Electrolyte

Y.-J. Yu*, Journal of the Korean Physical Society Vol. 74, No. 2, pp 132-135 (2019).

41. Reliable seawater battery anode: Controlled sodium nucleation via deactivation of current collector surface

D. H. Kim†, H. Choi†, D. Y. Hwang†, J. Park, K. S. Kim, S. Ahn, Y. Kim, S. K. Kwak*, Y. -J. Yu* and S. J. Kang*,

Journal of Materials Chemistry A Vol. 6, Issue. 40 pp 19672-19680 (2018).

40. Graphene laminated Cu nanoparticle arrays by spontaneous formation through dewetting

M. M. Haidari, H. Kim, J. H. Kim, S. Lee, Y. -J. Yu, J. T. Kim, C. -G. Choi, and J. S. Choi*, Journal of Industrial and Engineering Chemistry Vol. 64, No. 25 pp 367-372 (2018).

39. Facile dry surface cleaning of graphene by UV treatment

J. H. Kim, M. M. Haidari, J. S. Choi*, H. Kim, Y.-J. Yu, and J. Park, Journal of the Korean Physical Society Vol. 72, No. 9, pp 1045-1051 (2018).

38. Redox reaction investigation of graphene nanoribbon

Y. -J. Yu*, Applied Science and Convergence Technology Vol. 27,No. 2, pp 35-37 (2018).

37. Layer number identification of CVD-grown multilayer graphene using Si peak analysis

Y. -S. No, H. K. Choi, J.-S. Kim, H. Kim, Y. -J. Yu, C. -G. Choi, and J. S. Choi*, Scientific Reports 8:571 (2018).

36. Gas molecule sensing of van der Waals tunnel field effect transistors

H. K. Choi†, J. Park†, N. Myoung†, H. -J. Kim, J. S. Choi, Y. K. Choi, C. -Y. Hwang, J. T. Kim, S. Park, Y. Yi, S. K. Chang, H. C. Park, C. Hwang*, C.-G. Choi* and Y. -J. Yu*, Nanoscale Vol. 9, Issue 47, pp 18644-18650 (2017)

[Selected as Cover]

35. Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

J. Kwon†, J. -Y. Lee†, Y. -J. Yu, C. Lee, X. Cui, J. Hone and G. -H. Lee*, Nanoscale Vol. 9, Issue 18, pp 6151-6157 (2017).

34. Epitaxially self-assembled alkane layers for graphene electronics

Y. -J. Yu†, G. -H. Lee†, J. I. Choi†, C. -H. Lee, S. J. Kang, S. Lee, K. T. Rim, Y. S. Shim, G. Flynn, J. Hone, Y. -H. Kim*, P. Kim*, C. Nuckolls* and S. Ahn*, Advanced Materials Vol. 29, Issue 5, pp 1603925 (2017).

33. Transparent conducting films of silver hybrid films formed by near-field electrospinning

D. -H. Youn*, Y.-J. Yu, J. S. Choi, N. -M. Park, S. J. Yun, I. Lee and G. -H. Kim, Materials Letters Vol. 185, pp 139-142 (2016).

32. Infrared study of large scale h-BN film and graphene/h-BN heterostructure

K. Yu, J. Kim, C. Lee, A R. Jang, H. S. Shin, K. S. Kim, Y.-J. Yu, and E. Choi*, Applied Physics Letters Vol. 108, Issue 24, pp 241910 (2016).

31. Facile fabrication of properties-controllable graphene sheet

J. S. Choi†, H. Choi†, K. -C. Kim†, H. Y. Jeong, Y. -J. Yu, J. T. Kim, J. S. Kim and C. G. Choi*, Scientific Reports 6:24525 (2016).

30. Epitaxial growth of thin ferroelectric polymer films on graphene layer for fully transparent and flexible nonvolatile memory

K. L. Kim,W. Lee, S. K. Hwang, S. H. Joo, S. M. Cho, G. Song, S. H. Cho, B. J. Jeong, I. H., J. -H. Ahn, Y. -J. Yu, S. K. Kwak, S. J. Kang*, and C. Park*, Nano Letters Vol. 16, No. 1, pp 334-340 (2016).

29. Tunable Electrical and Optical Characteristics in Lateral Monolayer Graphene and Few-Layer MoS2 Heterostructure Devicesm

S. Rathi†, I. Lee†, D. Lim, J. Wang, Y. Ochiai, N. Aoki, K. Watanabe, T. Taniguchi, G. -H, Lee, Y. -J. Yu, P. Kim and G. -H. Kim*, Nano Letters Vol. 15, No. 8, pp 5017-5024 (2015).

28. Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene

Y. -J. Yu*†, K. S. Kim†, J. T. Nam†, S. R. Kwon, H. Byun, K. Lee, J.-H. Ryou, R. D. Dupuis, J. Kim, G. Ahn, S. Ryu, M.-Y. Ryu* and J. S. Kim*, Nano Letters Vol. 15, No. 2, pp 896-902 (2015).

27. Flexible and transparent gas molecule sensor integrated with sensing and heating graphene layers

H. Choi†, J. S. Choi†, J.-S. Kim, J.-H. Choe, K. H. Chung, J.-W. Shin, J. T. Kim, D.-H. Youn, K.-C. Kim, J.-I. Lee, S.-Y. Choi, P. Kim, C.-G. Choi* and Y. -J. Yu*, Small Vol. 10, Issue 18, pp 3685-3691 (2014). [Selected as Cover]

26. Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

S. J. Kang†, G.-H. Lee†, Y. -J. Yu†, Y. Zhao, B. Kim, J. Hone, P. Kim and C. Nuckolls, Advanced Functional Materials Vol. 24, Issue 32, pp 5157-5163 (2014).

25. Graphene-based plasmonic photodetector for photonic integrated circuits

J. T. Kim*, Y. -J. Yu, H. Choi, and C. -G. Choi, Optics Express Vol. 22, No. 1, pp 803-808 (2014).

24. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures

G.-H. Lee†, Y. -J. Yu†, X. Cui, N. Petrone, C.-H. Lee, M. S. Choi, D.-Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, R. Taniguchi, C. Nuckolls, P. Kim* and J. Hone*, ACS Nano Vol. 7, No. 9, pp 7931-7936 (2013). [Selected as Cover]

23. Electrically integrated SU-8 clamped graphene drum resonators for strain engineering

S. Lee†, C. Chen†, V. V. Deshpande, G.-H. Lee, I. Lee, M. Lekas, A. Gondarenko, Y. -J. Yu, K. Shepard, P. Kim and J. Hone*, Applied Physics Letters Vol. 102, Issue 15, pp 153101 (2013). [Selected as Cover]

22. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

M. S. Choi†, G. -H. Lee†, Y. -J. Yu†, D. -Y. Lee, S. H. Lee, P. Kim, J. Hone* and W. J. Yoo*, Nature Communications 4, 1624 (2013).

21. Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes

D.-H. Youn*, Y. -J. Yu, H. Choi, S.-H. Kim, S.-Y., Choi and C.-G. Choi, Nanotechnology Vol. 24, No. 7, pp 075202 (2013).

20. Water-Gated Charge Doping of Graphene Induced by Mica Substrates

J. Shim†, C. H. Lui†, T. Y. Ko, Y. -J. Yu, P. Kim, T. F. Heinz* and S. Ryu*, Nano Letters Vol. 12, No. 2, pp 648-654 (2012).

19. Single-gate band-gap opening of bilayer graphene by dual molecular doping

J. Park†, S. B. Jo†, Y. -J. Yu, Y. Kim, W. H. Lee, H. H. Kim, B. H. Hong, P. Kim, K. Cho and K. S. Kim*,

Advanced Materials Vol. 24, Issue 3, pp 407-411 (2012).

18. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

G. H. Lee, Y. -J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim and J. Hone*, Applied Physics Letters Vol. 99, Issue 24, pp 243114 (2011).

17. High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

Y. -J. Yu, M. Y. Han, S. Berciaud, A. B. Georgescu, T. F. Heinz, L. E. Brus, K. S. Kim and P. Kim*, Applied Physics Letters Vol. 99, Issue 18, pp 183105 (2011).

16. Label-free single-molecule detection of DNA hybridization kinetics with a carbon nanotube field-effect transistor

S. Sorgenfrei, C.-Y. Chiu, R. L. Gonzalez, Y. -J. Yu, P. Kim, C. Nuckolls and K. L. Shepard*, Nature Nanotechnology Vol. 6, No. 2, pp126-132 (2011).

15. Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

S. Ryu†, L. Liu†, S. Berciaud, Y. -J. Yu, H. Liu, P. Kim, G. W. Flynn* and L. E. Brus*, Nano Letters Vol. 10, No. 12, pp 4944-4951 (2010).

14. Near-field optical observation of electric-field-induced fluorescence-switching in laterally coupled quantum dots

Y. -J. Yu, H. Noh, W. Jhe*, H. -R. Noh, T. Nakaoka and Y. Arakawa, Physical Review. B Vol. 82, Issue 8, pp 085308 (2010).

13. Tuning the Graphene Work Function by Electric Field Effect

Y. -J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim and P. Kim*, Nano Letters Vol. 9, No. 10, pp 3430-3434 (2009).

12. Incident Polarization Independent of Topographic Artifacts in Scattering-Type Near-Field Microscopy

J. Ahn, S. Chang, Y. -J. Yu and W. Jhe*, Japanese Journal of Applied Physics Part 1, Vol. 47, No. 6, pp 4839-4842 (2008).

11. Near-field optical study of highly dense laterally coupled InAs single quantum dots

Y. -J. Yu, H. Noh, G. S. Jeon, H. -R. Noh, Y. Arakawa and W. Jhe*, Applied Physics Letters Vol. 91, Issue 4, pp 041117 (2007).

10. Magnetic and optical properties of (Ga1-xMnx)As diluted magnetic semiconductor quantum wires with above room ferromagnetic transition temperature

H. C. Jeon, T. W. Kang, T. W. Kim, Y.-J. Yu, W. Jhe and S.A. Song*, Journal of Applied Physics Vol. 101, Issue 2, pp 023508 (2007).

9. Near-field photoluminescence study of InAs/AlGaAs quantum-dot-based nanoclusters: Band-filling effect,

Y. -J. Yu, H. Noh, M. -H. Hong, I. -T. Jeong, J. -C. Woo, Y. Park, H. Jeon and W. Jhe*, Japanese Journal of Applied Physics Vol. 45, No 2A, pp 656-659 (2006).

8. Focusing characteristics of optical fiber axicon-microlens for near-field spectroscopy: Dependence of tip apex-angle

Y. -J. Yu, H. Noh, M. -H. Hong, H. -R. Noh, Y. Arakawa and W. Jhe*, Optics Communication Vol. 267, Issue 1, pp 264-270 (2006).

7. Near-field spectroscopy of bimodal size distribution of InAs/AlGaAs single quantum dots

Y. -J. Yu, I. -T. Jeong, J. -C. Woo and W. Jhe*, Applied Physics Letters Vol. 87, Issue 14, pp 143108 (2005).

6. Band-edge exciton transitions temperature in multiple stacked self-assembled (In(1-x)Mn(x))As quantum dot arrays

H. C. Jeon,, T. W. Kang, T. W. Kim, Y. -J. Yu, W. Jhe and S.A. Song*, Solid State Communications Vol. 136, Issue 2, pp 81-84 (2005).

5. Self-assembled (In1-xMnx) As diluted magnetic semiconductor quantum dots with high Tc

H. C. Jeon, K. J. Chung, K. J. Chung, T. W. Kang, T. W. Kim, Y. -J. Yu, W. Jhe and S. A. Song*, Current Applied Physics Vol. 4, No.2-4, pp 213-216 (2004).

4. High-resolution Near-field Spectroscopy of InAs Single Quantum Dots at 70K

Y. -J. Yu, W. Jhe* and Y. Arakawa, Applied Physics Letters Vol. 83, Issue 15, pp 3024 (2003).

3. Optical Investigation of InGaN/GaN Quantum Well Structures with Various Barrier Widths

Y. -J. Yu, M. -Y. Ryu, P. W. Yu*, D. -J. Kim and S. -J. Park, Journal of the Korean Physical Society Vol. 38, No.2, pp 134-137 (2001).

2. Silicon Doping Effect on the Optical Properties of In(0.15)Ga(0.85)N/In(0.015)Ga(0.985)N Quantum Wells

M. -Y. Ryu, Y. -J. Yu, E. -J. Shin, P. W. Yu*, J. I. Lee, S. K. Yu, E. S. Oh, O. H. Nam, C. S. Sone, Y. J. Park and T. I. Kim, Solid State Communications Vol. 116, Issue 12, pp 675-678 (2000).

1. Effects of Si Doping in the Barriers on the Optical Properties of In(0.15)Ga(0.85)N/In(0.015)Ga(0.985)N Multiple Quantum Wells

M. -Y. Ryu, Y. -J. Yu, P. W. Yu*, E. -J. Shin, N. W. Song, J. I. Lee, S. K. Yu, D. Kim, E. S. Oh, O. H. Nam, C. S. Sone, Y. J. Park and T. I. Kim, Journal of the Korean Physical Society Vol. 37, No. 6, pp 989-992 (2000).

Patents

8. MEMORY DEVICE CAPABLE OF DRIVING MULTI-LEVEL

Y. -J. Yu, H. S. Kim, O. H. Gwon, J. Y. Kim, S. -J. Kang, H. R. Byun Korea Patent, Patent No. : 10-2703459 (Sept. 02, 2024)

7. OPTICAL DETECTOR

J. T. Kim, Y. -J. Yu, H. -K. Choi, C. G. Choi, United States Patent, Patent No. : US 9,425,335 B2 (August 23, 2016)

6. OPTICAL MODULATOR AND OPTICAL MODULE INCLUDING THE SAME

J. T. Kim, K. H. Chung, Y. -J. Yu, C. G. Choi, United States Patent, Patent No. : US 9,291,836 B2 (March 22, 2016)

5. MOTHOD OF MANUFACUTING A JUNCTION ELECTRONIC HAVING A 2-DIMENSIONAL MATERIAL AS A CHANNEL, Y. -J. Yu, J. S. Kim, H. K. Choi, J. S. Choi, J. T. Kim, K. H. Chung, D. H. Youn, C. G. Choi, United States Patent, Patent No. : US 9,275,860B2 (March 1, 2016)

4. LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

D. H. Youn, Y. -J. Yu, K. H. Chung, C. G. Choi, United States Patent, Patent No. : US 9,257,610 B2 (Feb. 9, 2016)

3. GAS SENSOR AND MANUFACTURING METHOD THEREOF

Y. -J. Yu, H. Choi, C. G. Choi, J. T. Kim, K. H. Chung, D. H. Youn, J. S. Choi, United States Patent, Patent No. : US 9,178,032 B2 (Nov. 3, 2015)

2. METHOD OF TRANSFERRING GRAPHENE

J. S. Choi, Y. -J. Yu, J. T. Kim, K. H. Chung, D. H. Youn, C. G. Choi, United States Patent, Patent No. : US 9,023,166 B2 (May 5, 2015)

1. GRAPHENE NANORIBBON SENSOR

Y.-J. Yu, C. G. Choi, United States Patent, Patent No. : US 8,981,345 B2 (March 17, 2015)